Abstract
An analytical approach to electrothermal simulation of
SOI integrated circuits is presented, accounting for large
temperature gradients in the devices. Electrothermal
simulations of SOI analog circuits in Spice coupled with
the nonisothermal approach are performed and compared
with the isothermal BSIMSOI thermal circuit. Heat flow,
thermal coupling and self-heating effects in some SOI
analog integrated circuits are examined. Nonisothermal
effects on some electrical properties of analog circuits
are also briefly discussed.