Inorganic semiconductors are promising as light harvesting
material for next generation q-dot sensitized solar cells [1].
Attractive feature of q-dots is the ability to tune the band gap of q-dots
to harvest near infra-red to ultraviolet region of the solar spectrum [2].
Characteristic features of q-dots such as tunable band gaps and broad-band absorption properties,persuade sci-entific research interest on semiconductor sensitized solar cells[3].
Light harvesting q-dots can be anchored on high bandgap mesoporous semiconductor materials to sensitize the semi-conductor based photoanode resembling to configuration of dye
sensitized solar cells(DSSC) [4].In recent investigations, 8 and 7.5% solar cell efficiencies were reported for q-dot solar cells fab-ricated with PbS [5] and Sb2S3 [6] respectively,yet these efficiencies are inferior to that of DSSC
Co-sensitized PbS/CdS q-dot solar cells are found to be the promising choice in q-dot solar cells due to their efficient light harvesting properties,ease of fabrication and the low cost.By
using SILAR method,PbS/CdS has been anchored on TiO2, ZnO,SnO2 and achieved 2.3% efficiency with SnO2 photoelectrode [7].