Single Event Effect (SEE) is known as one of the major effects that may occur when a single radiation ionizing particles strikes the silicon. This effect can be destructive and non-destructive. An example of destructive effect is Single Event Latchup (SEL) that results in a high operating current, above device specifications, that must be corrected by a power reset. Non-destructive effects are defined as a transient effect fault provoked by the interaction of a single energized particles in drain PN junction of the off-state transistors. This strike may upset a node of the circuit and thus generate a transient voltage pulse that can be interpreted as internal signals and lead to an erroneous result [11]. When the transient pulse occurs in a memory element, such as a register, it is classified as Single Event Upset (SEU). When the particle hits a combinational element, inducing a pulse in the combinational logic, the upset is classified as Single Event Transient (SET).