Abstract- With rapid developments in semiconductor
manufacturing technologies, new and more complicated challenges
emerge in the Failure Analysis space. The real challenge arises
when similar electrical data is obtained from transistor
nano-probing from completely different defect types. Accurate
data interpretation is therefore the key to unraveling and
understanding the root causes of failure. This paper emphasizes on
the use of simulation as a tool to identify key differences in
electrical data to successfully zero in on the root causes of failure,
thus enabling wafer fabs to take appropriate corrective measures
in mitigating such failures. Successful case studies involving these
techniques will also be discussed.