Abstract—A high-performance, high-voltageswitchobtainedby a series connection of 3300 V insulated gate bipolar transistor (IGBT)modulesispresented. Thecorrectvoltagesharingbetween the devices is ensured by the presence of a simple and reliable auxiliary circuit, which acts as a feedback on the gate terminal. A comparison in terms of power losses, output currents, and switching performances to a single 6500 V IGBT module is also presented. An extended experimental analysis demonstrates strong advantages in terms of switching losses (up to 67%) and current and voltage gradients. Use of trench-gate IGBTs, available in the 3300 V size but not in the 6500 V one, allows extra performancetotheseriesconnectioncircuit,asexperimentalresultsshow. Such circuit is suitable to increase performances of high-power, high-voltage inverters used in railway traction, in high-voltage energy distribution lines, and in high-power solid-state klystron modulators.