A. Electric Field (E)
Fig. 2 shows the built-in electrical field (E) distribution of
the BSWCNT-based power diode. The maximum value of the
electrical field distribution is 3.6 x 107 Vim as can be
observed from Fig. 2. This electrical field (E) value is higher
than it is in conventional power diode made from silicon with
comparable dimensions. When the BSWCNTs semiconductor
is in the forward mode, significant number of electrons is
created in the conduction band and significant number of holes
(positive-charge carriers) is created in the valence band due to
the multiplying effect of the CNTs. Thus, in principle, the
built-in electric field can pull the generated electrons to the
negative-electrode and holes to the positive-electrode, thereby increasing the efficiency of the device. BSWCNT-based
power diode has higher reverse voltage breakdown than
silicon-based power diode because the electric field is strong
enough to separate the bound charges. This is due to the fact
that in nano-particles, the surface area of the particle is larger
when compared to its volume (more surface atoms than inside
atoms) [19]-[30]. Moreover, the linear geometry of the CNTs
enables faster charge removal during the off-cycle [27]-[32].
A. Electric Field (E)Fig. 2 shows the built-in electrical field (E) distribution ofthe BSWCNT-based power diode. The maximum value of theelectrical field distribution is 3.6 x 107 Vim as can beobserved from Fig. 2. This electrical field (E) value is higherthan it is in conventional power diode made from silicon withcomparable dimensions. When the BSWCNTs semiconductoris in the forward mode, significant number of electrons iscreated in the conduction band and significant number of holes(positive-charge carriers) is created in the valence band due tothe multiplying effect of the CNTs. Thus, in principle, thebuilt-in electric field can pull the generated electrons to thenegative-electrode and holes to the positive-electrode, thereby increasing the efficiency of the device. BSWCNT-basedpower diode has higher reverse voltage breakdown thansilicon-based power diode because the electric field is strongenough to separate the bound charges. This is due to the factthat in nano-particles, the surface area of the particle is largerwhen compared to its volume (more surface atoms than insideatoms) [19]-[30]. Moreover, the linear geometry of the CNTsenables faster charge removal during the off-cycle [27]-[32].
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