Although we have not determined which of the precipitates are CuAl2 and which are silicon
it is reasonable to expect that the oxygen in this film plays a role in inhibiting silicon
and copper diffusion to the grain boundaries during the annealing process. Both of the high deposition rate samples D(Fig.6) and E(fig.7) have larger grain sizes than the multi-pass deposited samples but exhibit several differences between themselves.Sample D has well annealed grains with few