The characteristics of the structure are as follows:
1) The membrane of the transducer is defined on
the SOI with better thickness uniformity and lower
residual stress, which will make the vibration
membrane achieve good thickness uniformity;
2) The structure consists of the integration
vibration membrane, of which additional electrode
deposition is not required to be discrete on the
surface, thus the frequency deviation is low
3) The transducer is produced by Si-Si bonding
technology, which can avoid the problems of
traditional surface sacrificial technology such as
having some difficulty in the cavity etch, the
limitation in membrane size which leads to the
decrease in sensitivity and a narrow band in the
frequency range.