In the following, SPICE Gummel-Poon (SGP) model
parameter extraction techniques is illustrated. Specifically, the
extraction of current gain and related compact model
parameters is described. The current gain may be obtained
from the Gummel plot and also the output characteristics of the
bipolar transistor. An automated measurement setup that may
be used for the extraction of device parameters is shown in
Figure 2. An Agilent 4156C-based or equivalent system is
chosen as it has the capability to measure dc characteristics of
semiconductor devices. As device characteristics evaluation is the prime objective, the controller is commonly used to collect
the measured data and transmit the data to the host computer
for post-processing. In order to extract the model parameters,
several measurements are performed at different biasing
conditions at room temperature.