Recent advancement in electronics technology has resulted in the miniaturization of transistors, allowing more
transistors to be crammed and integrated into a single device,
resulting in a higher performance device [1]. Nevertheless,
integration and cramming of transistors has resulted in the escalation of power dissipation as well as an increase in heat flux
at the devices. It is well known that the reliability of devices
is exponentially dependant on the operating temperature of
the junction, whereby a small difference in operating temperatures (in the order of 10–15 ◦C) can result in a two times
reduction in the lifespan of a device [2]. Therefore, it is essentially crucial for the heat generated from the devices to be dissipated as quickly and effectively as possible, to maintain the
operating temperatures of the device at a desired level [3,4]