2.3. Characterization of Mt, OMt and CPN
2.3.1. X-ray diffraction analysis
Wide-angle X-ray diffraction (WAXD) patterns with nickel filtered
Cu-Kα radiation were obtained in reflection, with an automatic Bruker
D8 Advance diffractometer. Patterns were recorded in 2°–80° as the
2θ range, 2θ being the diffraction peak angle. For the clay mineral, the
intensities of the WAXD patterns, after subtraction of the tail of the primary beam, were corrected for polarization and Lorentz factors, by
using the following equation:
Icor:
¼ Iexp:= 1 þ cos22θ
=2Þ
h i
sin2θ cosθ
=2
n h io
ð1Þ
where: Icor. is the corrected diffraction peak intensity and Iexp. is the
diffraction peak experimental intensity. For a better comparison with
literature data, these intensity corrections were not applied to WAXD
patterns of the CPN.
Reported XRD patterns were normalized with respect to the 060
reflection. The Dhk‘ correlation length of crystalswas determined applying
the Scherrer equation
Dhk‘
¼ Kλ= βhk‘ cosθhk‘
ð Þ ð2Þ
where: K is the Scherrer constant, λ is the wavelength of the irradiating
beam (1.5419 Å, Cu-Kα), βhk‘ is the width at half height, and θhk‘ is the
diffraction angle. The instrumental broadening, b, was also determined
by obtaining a WAXD pattern of a standard silicon powder 325 mesh
(99%), under the same experimental conditions. For each observed
reflection with βhk‘ b 1°, the width at half height, βhk‘ = (βhk‘ − b),
was corrected by subtracting the unavoidable instrumental broadening
of the closest silicon reflection from the experimental width at half
height, βhk‘.
2.3. Characterization of Mt, OMt and CPN2.3.1. X-ray diffraction analysisWide-angle X-ray diffraction (WAXD) patterns with nickel filteredCu-Kα radiation were obtained in reflection, with an automatic BrukerD8 Advance diffractometer. Patterns were recorded in 2°–80° as the2θ range, 2θ being the diffraction peak angle. For the clay mineral, theintensities of the WAXD patterns, after subtraction of the tail of the primary beam, were corrected for polarization and Lorentz factors, byusing the following equation:Icor:¼ Iexp:= 1 þ cos22θ =2Þh i sin2θ cosθ =2n h ioð1Þwhere: Icor. is the corrected diffraction peak intensity and Iexp. is thediffraction peak experimental intensity. For a better comparison withliterature data, these intensity corrections were not applied to WAXDpatterns of the CPN.Reported XRD patterns were normalized with respect to the 060reflection. The Dhk‘ correlation length of crystalswas determined applyingthe Scherrer equationDhk‘¼ Kλ= βhk‘ cosθhk‘ð Þ ð2Þwhere: K is the Scherrer constant, λ is the wavelength of the irradiatingbeam (1.5419 Å, Cu-Kα), βhk‘ is the width at half height, and θhk‘ is thediffraction angle. The instrumental broadening, b, was also determinedby obtaining a WAXD pattern of a standard silicon powder 325 mesh(99%), under the same experimental conditions. For each observedreflection with βhk‘ b 1°, the width at half height, βhk‘ = (βhk‘ − b),was corrected by subtracting the unavoidable instrumental broadeningof the closest silicon reflection from the experimental width at halfheight, βhk‘.
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