The IR2110 High and Low Side Drive device exceeds all requirements for driving the MOSFETs in
the bridge. It is capable of up to 500V at a current rating of 2A at fast switching speeds. This device is
required to drive the high side MOSFETS in the circuit designated HO, due to the fact that the gate to
source voltage must be higher than the drain to source voltage, which isthe highest voltage in the system.
This device utilizes a bootstrapping capacitor to maintain a voltage difference of approximately 10V
above the drain to source voltage. With a full bridge configuration, two of these devices are utilized, as
shown in the above figure. A typical connection of a single IR2110 device is shown in Figure 26.