• Oxide capacitance,Cox,is the capacitance per unit area
between the gate metal and the bulk surface.
• Gate-source voltage, VGS,is the voltage that applied
between gate and source to control the operation of the
transistor.
• Drain-source voltage,VDs,is the voltage which is applied
between drain and source.
• Threshold voltage,Vr,is the minimum voltage that will
induce inversion layer which tum onthe transistor.
• Drain-source current, IDS, is the current that flow between drain and source through the inversion channel
conducted beneath the gate when transistor is turned on.