The geometry of BSWCNTs can be optimized by adding Nitrogen (N) or Hydrogen (H) dopants. The advantages of Nitrogen-doping are to provide highly dispersed low interfacial resistance. The doping of the BSWCNTs such as nitrogen (nitrogen can change the optical properties of CNTs)
can be of greater interest than any semiconductor material due to its denser atom structure. By carefully controlling the dopants, it is possible to increase the life time of the carriers
and, hence, reduce the recombination rates and increase the efficiency. Unlike any other type of semiconductor in which doping is merely substitution of atoms of two types (donor or acceptor), BSWCNTs can be doped in three distinctive ways: intercalation, endohedral, and adductive [19]-[22]. The spectrum of the doping energy will differ for each manner of doping to increase the possibility of finding an optimum doping that will result in high efficiency.
The geometry of BSWCNTs can be optimized by adding Nitrogen (N) or Hydrogen (H) dopants. The advantages of Nitrogen-doping are to provide highly dispersed low interfacial resistance. The doping of the BSWCNTs such as nitrogen (nitrogen can change the optical properties of CNTs)can be of greater interest than any semiconductor material due to its denser atom structure. By carefully controlling the dopants, it is possible to increase the life time of the carriersand, hence, reduce the recombination rates and increase the efficiency. Unlike any other type of semiconductor in which doping is merely substitution of atoms of two types (donor or acceptor), BSWCNTs can be doped in three distinctive ways: intercalation, endohedral, and adductive [19]-[22]. The spectrum of the doping energy will differ for each manner of doping to increase the possibility of finding an optimum doping that will result in high efficiency.
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