The Plasma-AssistedMolecularBeamEpitaxy(PA-MBE)ofInNnanorodsonSi-andC-facesof6H–SiC
substrateshasbeendemonstrated.TheoptimumPA-MBEgrowthconditionsforInNnanorodswerewith
an indiumbeamequivalentpressureof 2.0107 Torrandagrowthtemperature 400 1C. The
coalescence ofInNnanorodstoformacontinuousInNlayerhasbeenachieved.TheInNlayersgrownby
MBE onSi-face6H–SiC haveIn-polarity.