The thin-film head element was formed using
ion-beam-sputtering and photolithographic techniques
[6]-[8]. Nis3Fel7 (at.%) film exhibited a saturation
magnetization of 10 kG, an electric resistivity of7 20
pQ-cm, and a saturation magnetostriction of + 5 x 10 . A
uniaxial anisotropy field of 3-6 Oe was induced by
depositing the film with a constant field of - 500 Oe applied
in the direction of in-plane. The impedance matching
circuits we used here were composed of bulk type
transmission lines such as coaxial cables and
microstriplines. The head element, transmission lines, and