Increasing the voltage ratings of IGBTs generally reduces
turn-on and turn-off di/dt and increases the switching loss [1].
For systems that require higher switching frequencies such as
high-voltage switch mode power supplies (SMPS) and pulsed
power applications, fast switching is essential to the performance
of the system with subsequent low turn-on and turnoff
losses. As such, a review of the inherent device structure
is important to understanding the loss mechanisms.