CHANGES in temperature affect system speed, power, and
reliability by altering the threshold voltage VT , mobility
μ, and saturation velocity vsat in each device [1]. The resulting
changes in device current can lead to timing failure or cause
circuits to exceed power budgets. The impact of temperature
on device drain current ID depends on the supply voltage.
Near a technology’s nominal voltage, the current–temperature
(I − T) dependence is negative, and ID (and device speed)
decreases with increasing temperature. At lower voltages, the
I − T dependence is positive, and ID increases with increasing
temperature [2]