Conclusions
We herein demonstrated that the photoluminescence of Si-substituted hydroxyapatite could be obtained effectively by doping with rare earth europium. In particular, the Raman spectra of the Eu doped Si-HA was controlled by thermal annealing. The photoluminescence of the Eu doped Si-HA with thermal annealing temperature of 1000–1100 °C was displayed strongest band at 610 nm, which was much stronger than those of the as-received Eu doped Si-HA. This enhancement of the PL was mainly attributed to the containing β-TCP phase in the microstructure which is inhibitor of photo quenching in hydropxyapatite luminescence.
Acknowledgment
This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant number “103.99-2013.05”.
References