In the previous bias configurations the bias current ICQ and voltage VCEQ were a function
of the current gain b of the transistor. However, because b is temperature sensitive,
especially for silicon transistors, and the actual value of beta is usually not well
defined, it would be desirable to develop a bias circuit that is less dependent on, or in
fact is independent of, the transistor beta. The voltage-divider bias configuration of
Fig. 4.28 is such a network. If analyzed on an exact basis, the sensitivity to changes in
beta is quite small. If the circuit parameters are properly chosen, the resulting levels of
ICQ and VCEQ can be almost totally independent of beta. Recall from previous discussions
that a Q -point is defined by a fixed level of ICQ and VCEQ as shown in Fig. 4.29 .
The level of IBQ will change with the change in beta, but the operating point on the
characteristics defined by ICQ and VCEQ can remain fixed if the proper circuit parameters
are employed.
As noted earlier, there are two methods that can be applied to analyze the voltage-divider
configuration. The reason for the choice of names for this configuration will become obvious
in the analysis to follow. The first to be demonstrated is the exact method , which can be
applied to any voltage-divider configuration. The second is referred to as the approximate
method and can be applied only if specific conditions are satisfied. The approximate approach
permits a more direct analysis with a savings in time and energy. It is also particularly
helpful in the design mode to be described in a later section. All in all, the approximate
approach can be applied to the majority of situations and therefore should be examined with
the same interest as the exact method