Fig. 1 shows optical micrographs (OM) of the glass/AIC-Si film for the undoped- and P-doped AIC-Si with various annealing times. The image was observed from the glass side to avoid the light reflected by the Al; the Al and Si layers were exchanged after annealing. Because of the difference in reflectivity between Al and Si, the dark Si grains are clearly visible in the highly reflecting Al matrix. Dendritic growth of the Si grain is apparent in the undoped- and P-doped AIC-Si [8,9]; however, a sharp difference is visible between these two samples. The P-doped AIC-Si exhibits lager grain size compared to the undoped AIC-Si with the same annealing time. For example, with an annealing time of 1