In 1974 a paper of Dingle and Henry changed a lot the scenario of SL technology [11]. In that work they presented the idea of exploiting quantum effects in heterostructure SL as a way to obtain wavelength tunability and achieve lower threshold lasing than in conventional (bulk) lasers. This was a seminal paper in the field of optoelectronics because it showed the advantages of quantum well (QW) lasers over the conventional (bulk) ones, and moreover, it also gave a clear indication of the improved lasers that could be fabricated by further exploiting the reduced dimensionality of the devices, which later would be referred to as quantum wires (2D-confinement) and quantum dots (3D-confinement). The first important advantage of QW lasers is the possibility to vary the lasing wavelength by only changing the width of the quantum well width during the growth process. Secondly, quantum well lasers can deliver more gain per injected carrier (that is, the differential gain, dg/dN is higher, thus providing higher speed) than bulk lasers; this implies that a lower threshold current density is required and, as a first consequence of the lower current injection, the internal losses, αi, are diminished in these devices. This means higher efficiency; the second consequence is that the refractive index change is smaller in QW lasers, which means lower frequency chirp and, consequently, narrower linewidth than in bulk lasers. These advantages in size-quantized heterostructures come mainly from the density of states profile (DOS) for carriers near the band-edges, summarized in Fig. 1. The point is that the narrowing of the DOS distribution (as the size-quantization is increased from no-confinement up to 3D-confinement) results in confinement of carrier energy distribution to narrower spectral regions. Another ingredient is that, as known from quantum mechanics [12], a high gain requires population inversion in energy levels with a high density of states. In bulk lasers this takes place only after the filling of the lower lying energy levels, whereas in QW devices the peak gain is associated with energy levels at the bottom of the bands (for a complete description, see e.g. Ref. [12, chap. 10] or Ref. [13, chap. 4]). This positive effect is enhanced in QD materials, as it has ideal delta of Dirac-like density of states, thus providing very high optical gain, in theory.