At higher TA, a formation
of the HfO2 monoclinic phase is evident by an increase of the observed
peaks' intensity with their concomitant narrowing and an appearance
of some peaks in the range of 2θ=40–65° (Fig. 3). Annealing of HfSiO
film at 1100 °C results in the appearance of the peaks at 2θ=30.3°,
2θ=35.3° and 2θ=50.6°, that become to be more pronounced for
longer annealing time.