is temperature sensitive.
At higher temperatures the effect of ICBO may become an important factor since
it increases so rapidly with temperature.
Note in Fig. 3.8 that as the emitter current increases above zero, the collector current
increases to a magnitude essentially equal to that of the emitter current as determined
by the basic transistor-current relations. Note also the almost negligible effect
of VCB on the collector current for the active region. The curves clearly indicate that
a first approximation to the relationship between IE and IC in the active region is given
by