This paper presents the simulation and experimental of Class-E power amplifier which consists of a load
network and a single transistor that is operated as a switch at the carrier frequency of the output signal. Class-E
power amplifier is often used in designing a high frequency ac power source because its ability to perform the
conversion efficiently even when working at high frequencies with significant reduction in switching losses. In this
paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laboratory with operating frequency
of 1 MHz. To be specific, SK40C microcontroller board with PIC16F877A is used to generate a pulse width
modulation (PWM) switching signal to drive the IRF510 MOSFET. This paper focuses on studying the effect of
switching and performance analysis of the Class-E power amplifier behavior at 1MHz frequency. The performance
parameter relationship of Class-E power amplifier were observed and analyzed. The theoretical calculations,
simulation and experimental results at optimum operation using selected component values are compared and
presented. The final result shows an output power is 9.45W with a drain efficiency of 98.44%. It is also shown that
both simulation and experimental agree well with theoretical predictions.