To obtain a better adherence between the
substrate and the active film, the wafer was heated to 60 ◦C.
After printing, the wafers were left for levelling at room temperature.
They were subsequently dried for 15 min at 125 ◦C
for the organic vehicle to be completely removed, and then
fired for 1 h in a belt furnace at a single level of temperature,
equal to 600 ◦C. The deposited wafers were then ready for
backside etching, dicing and packaging.