boron atoms in an area concentration of 10^16 are introduced into an n-type wafer from a boron source in a carrier gas. the strating n-type wafer has a uniform donor concentration of 5 cm. The subsequent drive-in diffusion is carried out at 1100 in a oxygen ambient. The desired junction depth is 2 micron. how long should the drive-in diffusion be continued?
Assume that the diffusion coefficient of boron is 10^-12 at 1100 C.
are arbitrary complex numbers. Does this set of matrices form a vector space? It so, find a basis