Among metal oxide, tin dioxide (SnO2), is an n-type semiconductor with a wide band gap (Eg E 3.8 eV), which is extensively used in optoelectronic devices. SnO2 nanos-
tructures have proven as promising material due to their potential applications in nanosensors. In view of this, much attention has been paid to the synthesis and characterization of SnO2 nanostructures such as nanopar-
ticles, nanowires and nanobelts etc. [6].