I. INTRODUCTIONTHE INSULATED-GATE b

I. INTRODUCTION
THE INSULATED-GATE bipolar transistor (IGBT) has accrued
success as a high-power solid-state switching device
due its combination of fast switching, low conduction loss,
and high-impedance gate control. However, there will always
be an unrelenting demand for higher performance devices.
Manufacturers are therefore motivated to develop switches with
extended voltage ratings and current carrying capability. Cur-rently, commercial off-the-shelf (COTS) high-voltage IGBTs
are rated up to 6.5 kV from multiple manufacturers. Highvoltage
(> 1200 V) IGBTs are commonly sold as modules with
ratings from 200 to over 2000 A, aimed at motor control and
traction applications.
Increasing the voltage ratings of IGBTs generally reduces
turn-on and turn-off di/dt and increases the switching loss [1].
For systems that require higher switching frequencies such as
high-voltage switch mode power supplies (SMPS) and pulsed
power applications, fast switching is essential to the performance
of the system with subsequent low turn-on and turnoff
losses. As such, a review of the inherent device structure
is important to understanding the loss mechanisms